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december 2016 docid029209 rev 2 1 / 16 this is information on a product in full production. www.st.com STD13N60DM2 n - channel 600 v, 0.310 typ., 11 a mdmesh? dm2 power mosfet in a dpak package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max. i d STD13N60DM2 600 v 0.365 11 a ? fast - recovery body diode ? extremely low gate charge and input capacitance ? low on - resistance ? 100% avalanche tested ? extremely high dv/dt ruggedness ? zener - protected applications ? switching applica tions description this high voltage n - channel power mosfet is part of the mdmesh? dm2 fast recovery diode series. it offers very low recovery charge (q rr ) and time (t rr ) combined with low r ds(on) , rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and zvs phase - shift converters. table 1: devic e summary order code marking package packing STD13N60DM2 13n60dm2 dpak tape and reel
contents STD13N60DM2 2 / 16 docid029209 rev 2 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteri stics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 8 4 package information ................................ ................................ ....... 9 4.1 dpak (to - 252) type a2 package information ................................ . 10 4.2 dpa k (to - 252) packing information ................................ ............... 13 5 revision history ................................ ................................ ............ 15
STD13N60DM2 electrical ratings docid029209 rev 2 3 / 16 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 25 v i d drain current (continuous) at t case = 25 c 11 a drain current (continuous) at t case = 100 c 7 i dm (1) drain current (pulsed) 44 a p tot total dissipation at t case = 25 c 110 w dv/dt (2) peak diode recovery voltage slope 40 v/ns dv/dt (3) mosfet dv/dt ruggedness 50 t stg storage temperature range - 55 to 150 c t j operating junction temperature range notes: (1) pulse width limited by safe operating area. (2) i sd 11 a, di/dt 900 a/s; v ds peak < v (br)dss , v dd =400 v. (3) v ds 480 v. table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case 1.14 c/w r thj - pcb (1) thermal resistance junction - pcb 50 notes: (1) when mounted on fr - 4 board of inch2, 2oz cu. table 4: avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 2.5 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 340 mj
electrical characteristics STD13N60DM2 4 / 16 docid029209 rev 2 2 electrical characteristics (t case = 25 c unless oth erwise specified) table 5: static symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 ma 600 v i dss zero gate voltage drain current v gs = 0 v, v ds = 600 v 1.5 a v gs = 0 v, v ds = 600 v, t case = 125 c (1) 100 i gss gate - body leakage current v ds = 0 v, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 5.5 a 0.310 0.365 notes: (1) defined by design, not subject to production test. table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 v - 730 - pf c oss output capacitance - 38 - c rss reverse transfer capacitance - 0.9 - c oss eq. (1) equivalent output capacitance v ds = 0 to 480 v, v gs = 0 v - 70 - pf r g intrinsic gate resistance f = 1 mhz, i d = 0 a - 5.1 - q g total gate charge v dd = 480 v, i d = 11 a, v gs = 10 v (see figure 15: "test circuit for gate charge behavior" ) - 19 - nc q gs gate - source charge - 4.4 - q gd gate - drain charge - 9.9 - notes: (1) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 300 v, i d = 5.5 a r g = 4.7 , v gs = 10 v (see figure 14: "test circuit for resistive load switching times" and figure 19: "switching time waveform" ) - 12.3 - ns t r rise time - 4.8 - t d(off) turn - off delay time - 42.5 - t f fall time - 10.6 -
STD13N60DM2 electrical characteristics docid029209 rev 2 5 / 16 table 8: source - drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 11 a i sdm (1) source - drain current (pulsed) - 44 a v sd (2) forward on voltage v gs = 0 v, i sd = 11 a - 1.6 v t rr reverse recovery time i sd = 11 a, di/dt = 100 a/s, v dd = 60 v (see figure 16: "test circuit for inductive load switching and diode recovery times" ) - 90 ns q rr reverse recovery charge - 252 nc i rrm reverse recovery current - 5.6 a t rr reverse recovery time i sd = 11 a, di/dt = 100 a/s, v dd = 60 v, t j = 150 c (see figure 16: "test circuit for inductive load switching and diode recovery times" ) - 170 ns q rr reverse recovery charge - 667 nc i rrm reverse recovery current - 8.6 a notes: (1) pulse width is limited by safe operating area. (2) pulse test: pulse duration = 300 s, duty cycle 1.5%. table 9: gate - source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate - source breakdown voltage i gs = 250 a, i d = 0 a 30 - - v the built - in back - to - back zener diodes are specifically designed to enhance the esd performance of the device. the zener voltage facilitates efficient and cost - effective device integrity protection, thus eliminating the need for additional external componentry.
electrical characteristics STD13N60DM2 6 / 16 docid029209 rev 2 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance
STD13N60DM2 electrical characteristics docid029209 rev 2 7 / 16 figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normalized on - resistance vs temperature figure 11 : normalized v(br)dss vs temperature figure 12 : output capacitance stored energy figure 13 : source - drain diode forward characteristics
test circuits STD13N60DM2 8 / 16 docid029209 rev 2 3 test circuits figure 14 : test circuit for resistive load switching times figure 15 : test circuit for gate charge behavior figure 16 : test circuit for inductive load switching and diode recovery times figure 17 : unclamped inductive load test circuit figure 18 : unclamped inductive waveform figure 19 : switchi ng time waveform
STD13N60DM2 package information docid029209 rev 2 9 / 16 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package information STD13N60DM2 10 / 16 docid029209 rev 2 4.1 dpak (to - 252) type a2 package information figure 20 : dpak (to - 252) type a2 package outline 0068772_type-a2_rev21
STD13N60DM2 package information docid029209 rev 2 11 / 16 table 10: dpak (to - 252) type a2 mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 4.95 5.10 5.25 e 6.40 6.60 e1 5.10 5.20 5.30 e 2.16 2.28 2.40 e1 4.40 4.60 h 9.35 10.10 l 1.00 1.50 l1 2.60 2.80 3.00 l2 0.65 0.80 0.95 l4 0.60 1.00 r 0.20 v2 0 8
package information STD13N60DM2 12 / 16 docid029209 rev 2 figure 21 : dpak (to - 252) type a2 recommended footprint (dimensions are in mm)
STD13N60DM2 package information docid029209 rev 2 13 / 16 4.2 dpak (to - 252) packing information figure 22 : dpak (to - 252) tape outline
package information STD13N60DM2 14 / 16 docid029209 rev 2 figure 23 : dpak (to - 252) reel outline table 11: dpak (to - 252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r 40 t 0.25 0.35 w 15.7 16.3
STD13N60DM2 revision history docid029209 rev 2 15 / 16 5 revision history table 12: document revision history date revision changes 11 - apr - 2016 1 first release. 07 - dec - 2016 2 document status promoted from preliminary to production data.
STD13N60DM2 16 / 16 docid029209 rev 2 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2016 stmicroelectronics C all rights reserved

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